Data availabilitySummary statistics generated by COVID-19 Host Genetics Initiative are available online (https://www.covid19hg.org/results/r6/). The analyses described here use the freeze 6 data. The COVID-19 Host Genetics Initiative continues to regularly release new data freezes. Summary statistics for samples from individuals of non-European ancestry are not currently available owing to the small individual sample sizes of these groups, but the results for 23 loci lead variants are reported in Supplementary Table 3. Individual-level data can be requested directly from the authors of the contributing studies, listed in Supplementary Table 1.

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Abstract-In this paper linear and nonlinear properties of graphene at millimeter wave frequency band are investigated. The nonlinear properties of the graphene are utilized to design frequency multiplier and mixer for millimeter wave applications. A patch of graphene is deposited on the dielectric image guide that will generate higher order harmonics. The amplitude of harmonics is optimized based on the dimensions of the graphene patch on top of the dielectric image guide. A frequency multiplier and mixer are designed, which utilize the second harmonics generated through graphene. The nonlinear behavior of the proposed designs has been simulated in the 50-75 GHz input signal frequency range. A conversion efficiency of −23 dB is obtained for the second harmonic for the frequency doubler. The frequency mixer is designed to mix two frequencies in V-band using dielectric image guide as the waveguide. A −28 dB conversion efficiency is simulated on a dielectric image-guide platform.

A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform supports mm-wave components in the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with high potential of integration of active devices. There is no need for post-fabrication assembly steps for complex systems, which will provide high accuracy of placement of different components on the same platform. The platform is theoretically and experimentally investigated. The fabrication process is a simple one-mask fabrication process composed of deep reactive ion etching of the device layer of the SOI wafer. Design of dielectric image guide in the D-Band is performed. The simulation results show attenuation better than 0.25 dB/cm. Fabrication and experimental measurements are performed at 60 and 100 GHz.

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