All-inorganic CsPbX3 (X=I, Br, Cl) perovskite quantum dots (PQDs) have been investigated because of their optical properties, such as tunable wavelength, narrow band, and high quantum efficiency. These features have been used in light emitting diode (LED) devices. LED on-chip fabrication uses mixed green and red quantum dots with silicone gel. However, the ion-exchange effect widens the narrow emission spectrum. Quantum dots cannot be mixed because of anion exchange. We address this issue with a mesoporous PQD nanocomposite that can prevent ion exchange and increase stability. We mixed green quantum-dot-containing mesoporous silica nanocomposites with red PQDs, which can prevent the anion-exchange effect and increase thermal and photo stability. We applied the new PQD-based LEDs for backlight displays. We also used PQDs in an on-chip LED device. Our white LED device for backlight display passed through a color filter with an NTSC value of 113 % and Rec. 2020 of 85 %.

No abstract

All‐inorganic CsPbX3 (X=I, Br, Cl) perovskite quantum dots (PQDs) have been investigated because of their optical properties, such as tunable wavelength, narrow band, and high quantum efficiency. These features have been used in light emitting diode (LED) devices. LED on‐chip fabrication uses mixed green and red quantum dots with silicone gel. However, the ion‐exchange effect widens the narrow emission spectrum. Quantum dots cannot be mixed because of anion exchange. We address this issue with a mesoporous PQD nanocomposite that can prevent ion exchange and increase stability. We mixed green quantum‐dot‐containing mesoporous silica nanocomposites with red PQDs, which can prevent the anion‐exchange effect and increase thermal and photo stability. We applied the new PQD‐based LEDs for backlight displays. We also used PQDs in an on‐chip LED device. Our white LED device for backlight display passed through a color filter with an NTSC value of 113 % and Rec. 2020 of 85 %.

All inorganic CsPbBr perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot-injection method to partially replace the toxic Pb with highly stable Sn . Meanwhile, the absolute photoluminescence quantum yield of CsPb Sn Br increased from 45 % to 83 % with Sn substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr and CsPb Sn Br QDs at various excitation fluences were determined by femtosecond transient absorption, time-resolved photoluminescence, and single-dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb Sn Br QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m , a current efficiency of 11.63 cd A , an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w , and a low turn-on voltage of 3.6 V, which are the best values among reported tin-based perovskite quantum-dot LEDs.

All inorganic CsPbBr3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot‐injection method to partially replace the toxic Pb2+ with highly stable Sn4+. Meanwhile, the absolute photoluminescence quantum yield of CsPb1−xSnxBr3 increased from 45 % to 83 % with SnIV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr3 and CsPb0.67Sn0.33Br3 QDs at various excitation fluences were determined by femtosecond transient absorption, time‐resolved photoluminescence, and single‐dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb0.67Sn0.33Br3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m−2, a current efficiency of 11.63 cd A−1, an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w−1, and a low turn‐on voltage of 3.6 V, which are the best values among reported tin‐based perovskite quantum‐dot LEDs.