No abstract

Background: Cervical cancer is a malignant neoplasm arising from cells of cervix uteri. It is the second most common cancer among women worldwide, affecting about 16 per 1,00,000 women each year. Methods: A cross sectional study of 400 women of reproductive age group (21-49 years) attending Lady Goschen Hospital and KMC Hospital, Attavar, Mangalore was conducted, and women were screened for the presence of cervical cancer by Pap smear. The results were analyzed with respect to age distribution, age at marriage, parity, symptoms and per-speculum findings. Pregnant women and women with active infection of the genital tract were excluded from the study population. Results: The age range was 21 to 49 years. Mean age was 38.14 years. Of the 400 women, 398 were married and majority of these, 237 (59.5%), got married between 21-25 years. Menstrual irregularity was the most common presenting symptom, 150/400 (37.5%). Abnormal per speculum findings were seen in 102/400 (25.5%). 17 of 400 Pap smears were abnormal, of which 1 (0.25%) was AG-FN, 2 ASCUS (0.5%), 3 (0.75%) ASC-H, 1 (0.25%) LSIL, 7 (1.75%) HSIL and 3 (0.75%) SCC. Mean age for cancer cervix patients was 42.33 years. Conclusions: Pap smear screening, which appears to be the most feasible and affordable mode for control of carcinoma cervix in developing countries like India, should be carried out in all women of reproductive age group.

The integration of both optical and electronic components on a single chip, despite the challenge, holds the promise of compatibility with CMOS technology and high scalability. Among all candidate materials, III-V semiconductor nanostructures are key ingredients for opto-electronics and quantum optics devices, such as light emitters and harvesters. The control over geometry, and dimensionality of the nanostructures, enables one to modify the band structures, and hence provide a powerful tool for tailoring the opto-electronic properties of III-V compounds. One of the most creditable approaches towards such growth control is the combination of using patterned wafer and the self-assembled epitaxy. This work presents monolithically integrated catalyst-free InP nanowires grown selectively on nanotip-patterned (001)Si substrates using gas-source molecular-beam epitaxy. The substrates are fabricated using CMOS nanotechnology. The dimensionality of the InP structures can be switched between two-dimensional nanowires and three-dimensional bulk-like InP islands by thermally modifying the shape of Silicon nanotips, surrounded by the SiO2 layer during the oxide-off process. The structural and optical characterization of nanowires indicate the coexistence of both zincblende and wurtzite InP crystal phases in nanowires. The two different crystal structures were aligned with a type-II heterointerface.