Emerging and newly proposed devices integrate various materials at different scales (nano to submicron), revealing sensor response. Prefab simulation is in great demand to elucidate fundamental biosensor phenomena based on transistors. Numerous high electron mobility transistor (HEMT)-based biosensors have been developed, however metal oxide semiconductor HEMT (MOSHEMT) deserves to be further investigated. Sensitivity analysis with neutral and charged biomolecules was carried out using single gate high-κ dielectric MOSHEMT through computer aided design simulation. Device performance was evaluated through shift (sensing action) of device parameters like two-dimensional electron gas, on-current, transconductance, drain current, and output conductance due to immobilization of biomolecules in cavity created under gate. For neutral biomolecule (κ=8), fluctuation in on-current, transconductance, drain current, and output conductance is determined to be 330.3 μA/μm,102.0 μS/μm,319.0μA/μm,and 534.9 μS/μm, respectively. Positively charged biomolecules were more sensitive to device than negatively charged ones. Analysis was done on response to the fill rates of the biomolecules in the cavity. For vertical, horizontal, and tapered profiles, the transconductance sensitivities are 0.65, 0.17, and 0.32 and drain current sensitivities are 0.25, 0.16, and 0.27 at lowest fill (25%). Therefore, AlGaN/ GaN dielectric modulated MOSHEMT assures that the device can be used in sensitive intelligent biomedical applications.

No abstract

No abstract

No abstract

No abstract