Plasma facing components for future fusion applications will experience heliumand neutron-induced structural damage. Direct observation of the in-situ dynamic response of such components during particle beam exposure assists in fundamental understanding of the physical phenomena that give rise to their irradiation resistance. We investigated the response of ultrafine and nanocrystalline-grained tungsten to 3 MeV heavy ion irradiations (Si 2+ , Cu 3+ and W 4+) for the simulation of neutron-induced damage through transmutation reactions via in-situ ion irradiation-transmission electron microscopy experiments. Defect densities as a function of irradiation dose (displacement per atom) and fluence were studied. Four stages of defect densities evolution were observed, as a function of irradiation dose: 1) increase in defect density at lower doses 2) higher defect production rate at the intermediate doses (before saturation), 3) reaching the maximum value, and 4) drop of the defect density in the case of W 4+ , possibly due to defect coalescence and grain boundary absorption of small defect clusters. The effect of grain size on defect densities were investigated and found that defect densities were

Tungsten has been chosen as the main candidate for plasma facing components (PFCs) due to its superior properties under extreme operating conditions in future nuclear fusion reactors such as ITER. One of the serious issues for PFCs is the high heat load during transient events such as ELMs and disruption in the reactor. Recrystallization and grain size growth in PFC materials caused by transients are undesirable changes in the material, since the isotropic microstructure developed after recrystallization exhibits a higher ductile-to-brittle transition temperature which increases with the grain size, a lower thermal shock fatigue resistance, a lower mechanical strength, and an increased surface roughening. The current work was focused on careful determination of the threshold parameters for surface recrystallization, grain growth rate, and thermal shock fatigue resistance under ELM-like transient heat events. Transient heat loads were simulated using long pulse laser beams for two different grades of ultrafine-grained tungsten. It was observed that cold rolled tungsten demonstrated better power handling capabilities and higher thermal stress fatigue resistance compared to severely deformed tungsten. Higher recrystallization threshold, slower grain growth, and lower degree of surface roughening were observed in the cold rolled tungsten.

A systematic study is conducted in order to elucidate the underlying mechanism(s) for nanopatterning with low-energy irradiation of GaSb (100) under normal incidence. Ion energies between 50 and 1000 eV of Arþ and ion fluences of up to 10 18 cm À2 were employed. Characterization of the shallow (e.g., 1 to 6 nm) amorphous phase region induced by irradiation and the subsurface crystalline phase region is accomplished with low-energy ion scattering spectroscopy and x-ray photoelectron spectroscopy, respectively. In situ studies are conducted due to the strong chemical affinity for oxygen of GaSb. The studies conclude that at energies below 200 eV, the native oxide layer hampers nanopatterning until it becomes removed at a fluence of approximately 5 Â 10 16 cm À2. At this energy and threshold fluence, the surface is enriched with Ga atoms during irradiation. At energies above 200 eV, the native oxide layer is efficiently removed in the early irradiation stages, and thus the detrimental effects from the oxide on nanopatterning are negligible. In situ surface concentration quantification indicates that the surface enrichment with Sb atoms in the amorphous phase layer increases with the incident ion energy. Post-air exposure characterization reveals that the measured enrichment of the surface with gallium is due to oxygen reduction by Ga atoms segregated from both the amorphous and the crystalline phase regions as a result of air exposure. V

We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for a time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution. V

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 × 1015–1 × 1016 cm−2) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga2O3 fractions were also observed on “oxide free” samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.