We demonstrate the quality factor Q - (0.8 +/- 0.1) x 10(10) of whispering-gallery modes in fused-silica microspheres at 633 nm, close to the ultimate level determined by fundamental material attenuation as measured in optical fibers. The lifetime of ultimate Q is limited by adsorption of atmospheric water. Monitoring of adsorption kinetics with submonolayer sensitivity by Q factors and frequencies of whispering-gallery modes is demonstrated. The possibility of supermaterial Q's owing to intrinsic suppression of scattering losses in micropheres is discussed.

We demonstrate parametric frequency doubling in a whispering gallery cavity made of periodically poled lithium niobate. This demonstration is an example of utility of such crystalline optical whispering gallery resonators with very high Q factors, which we have fabricated.

We report on the experimental demonstration of a tunable monolithic optical frequency comb generator. The device is based on four-wave mixing in a crystalline calcium fluoride whispering gallery mode resonator. The frequency spacing of the comb is given by an integer number of the free spectral range of the resonator. We select the desired number by tuning the frequency of the pumping laser with respect to the corresponding resonator mode. We also observe a rich variety of optical combs and high-frequency hyperparametric oscillation, depending on the experimental conditions. A potential application of the comb for generating tunable narrow band frequency microwave signals is demonstrated.

Femtosecond laser-based generation of radio frequency signals has produced astonishing improvements in achievable spectral purity, one of the basic features characterizing the performance of an radio frequency oscillator. Kerr frequency combs hold promise for transforming these lab-scale oscillators to chip-scale level. In this work we demonstrate a miniature 10 GHz radio frequency photonic oscillator characterized with phase noise better than −60 dBc Hz−1 at 10 Hz, −90 dBc Hz−1 at 100 Hz and −170 dBc Hz−1 at 10 MHz. The frequency stability of this device, as represented by Allan deviation measurements, is at the level of 10−10 at 1–100 s integration time—orders of magnitude better than existing radio frequency photonic devices of similar size, weight and power consumption.

Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.