We investigate the spinless Anderson-Holstein model routinely employed to describe the basic physics of phonon-assisted tunneling in molecular devices. Our focus is on small to intermediate electron-phonon coupling; we complement a recent strong coupling study [Phys. Rev. B 87, 075319 (2013)]. The entire crossover from the antiadiabatic regime to the adiabatic one is considered. Our analysis using the essentially analytical functional renormalization group approach backed up by numerical renormalization group calculations goes beyond lowest order perturbation theory in the electron-phonon coupling. In particular, we provide an analytic expression for the effective tunneling coupling at particle-hole symmetry valid for all ratios of the bare tunnel coupling and the phonon frequency. It contains the exponential polaronic as well as the power-law renormalization in the electron-phonon interaction; the latter can be traced back to x-ray edgelike physics. In the antiadiabatic and the adiabatic limit this expression agrees with the known ones obtained by mapping to an effective interacting resonant level model and lowest order perturbation theory, respectively. Away from particle-hole symmetry, we discuss and compare results from several approaches for the zero temperature electrical conductance of the model.
We employ the functional renormalization group to study the effects of phonon-assisted tunneling on the nonequilibrium steady-state transport through a single level molecular quantum dot coupled to electronic leads. Within the framework of the spinless Anderson-Holstein model, we focus on small to intermediate electron-phonon couplings, and we explore the evolution from the adiabatic to the antiadiabatic limit and also from the low-temperature non-perturbative regime to the high temperature perturbative one. We identify the phononic signatures in the bias-voltage dependence of the electrical current and the differential conductance. Considering a temperature gradient between the electronic leads, we further investigate the interplay between the transport of charge and heat. Within the linear response regime, we compare the temperature dependence of various thermoelectric coefficients to our earlier results obtained within the numerical renormalization group [Phys. Rev. B 96, 195156 (2017)]. Beyond the linear response regime, in the context of thermoelectric generators, we discuss the influence of molecular vibrations on the output power and the efficiency. We find that in the antiadiabatic limit the thermoelectric efficiency can be significantly enhanced.arXiv:1808.01211v2 [cond-mat.str-el]
We investigate the effect of vibrational degrees of freedom on the linear thermoelectric transport through a single-level quantum dot described by the spinless Anderson-Holstein impurity model. To study the effects of strong electron-phonon coupling, we use the nonperturbative numerical renormalization group approach. We also compare our results, at weak to intermediate coupling, with those obtained by employing the functional renormalization group method, finding good agreement in this parameter regime. When applying a gate voltage at finite temperatures, the inelastic scattering processes, induced by phonon-assisted tunneling, result in an interesting interplay between electrical and thermal transport. We explore different parameter regimes and identify situations for which the thermoelectric power as well as the dimensionless figure of merit are significantly enhanced via a Mahan-Sofo type of mechanism. We show, in particular, that this occurs at strong electron-phonon coupling and in the antiadiabatic regime.
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