Although recent experiments and theories have shown a variety of exotic transport properties of nonequilibrium quasiparticles (QPs) in superconductor (SC)-based devices with either Zeeman or exchange spin-splitting, how a QP interplays with magnon spin currents remains elusive. Here, using nonlocal magnon spin-transport devices where a singlet SC (Nb) on top of a ferrimagnetic insulator (Y3Fe5O12) serves as a magnon spin detector, we demonstrate that the conversion efficiency of magnon spin to QP charge via inverse spin-Hall effect (iSHE) in such an exchange-spin-split SC can be greatly enhanced by up to 3 orders of magnitude compared with that in the normal state, particularly when its interface superconducting gap matches the magnon spin accumulation. Through systematic measurements by varying the current density and SC thickness, we identify that superconducting coherence peaks and exchange spin-splitting of the QP density-of-states, yielding a larger spin excitation while retaining a modest QP charge-imbalance relaxation, are responsible for the giant QP iSHE. The latter exchange-field-modified QP relaxation is experimentally proved by spatially resolved measurements with varying the separation of electrical contacts on the spin-split Nb.

Most of the magnetic devices in advanced electronics rely on the exchange bias effect, a magnetic interaction that couples a ferromagnetic and an antiferromagnetic material, resulting in a unidirectional displacement of the ferromagnetic hysteresis loop by an amount called the 'exchange bias field'. Setting and optimizing exchange bias involves cooling through the Néel temperature of the antiferromagnetic material in the presence of a magnetic field. Here we demonstrate an alternative process for the generation of exchange bias. In IrMn/FeCo bilayers, a structural phase transition in the IrMn layer develops at room temperature, exchange biasing the FeCo layer as it propagates. Once the process is completed, the IrMn layer contains very large single-crystal grains, with a large density of structural defects within each grain, which are promoted by the FeCo layer. The magnetic characterization indicates that these structural defects in the antiferromagnetic layer are behind the resulting large value of the exchange bias field and its good thermal stability. This mechanism for establishing the exchange bias in such a system can contribute towards the clarification of fundamental aspects of this exchange interaction.

Cyber-physical systems (CPS) are envisioned to change the whole of society. New engineered systems joining physical and digital solutions are being employed in industry, education, etc. These new systems are networked by default, and private information is shared among the different components related to users, critical infrastructures, or business operations. In this context, it is essential to encrypt those communication links to protect such information. However, even most complicated schemes based on hybrid (asymmetric and symmetric) solutions, finally require physical devices to store a secret key. This approach is cryptographically weak, as any person with physical access to the device could obtain that key. Therefore, in this paper we propose the use of physical unclonable functions (PUF) to generate secret keys for lightweight encryption schemes. Using PUFs, any attempt to capture the key is changing the original secret stream, and even manufacturers are not able to build two identical PUFs. The proposed key generator is based on magnetic materials and lightweight pseudorandom number generators to meet the low-cost and small size requirements of CPS. In particular, materials with an activated exchange-bias effect are employed, together with simple copper coils. The encryption process can be based on a simple XOR gate because of the robustness of the proposed key generator. In order to evaluate the performance of the proposed technology, an experimental validation based on simulation scenarios is also provided.

The fabrication of three-dimensional nanostructures is key to the development of next-generation nanoelectronic devices with a low device footprint. Magnetic racetrack memory encodes data in a series of magnetic domain walls that are moved by current pulses along magnetic nanowires. To date, most studies have focused on two-dimensional racetracks. Here we introduce a lift-off and transfer method to fabricate three-dimensional racetracks from freestanding magnetic heterostructures grown on a water-soluble sacrificial release layer. First, we create two-dimensional racetracks from freestanding films transferred onto sapphire substrates and show that they have nearly identical characteristics compared with the films before transfer. Second, we design three-dimensional racetracks by covering protrusions patterned on a sapphire wafer with freestanding magnetic heterostructures. We demonstrate current-induced domain-wall motion for synthetic antiferromagnetic three-dimensional racetracks with protrusions of up to 900 nm in height. Freestanding magnetic layers, as demonstrated here, may enable future spintronic devices with high packing density and low energy consumption.

Of great promise are synthetic antiferromagnet-based racetrack devices in which chiral composite domain walls can be efficiently moved by current. However, overcoming the trade-off between energy efficiency and thermal stability remains a major challenge. Here we show that chiral domain walls in a synthetic antiferromagnet–ferromagnet lateral junction are highly stable against large magnetic fields, while the domain walls can be efficiently moved across the junction by current. Our approach takes advantage of field-induced global energy barriers in the unique energy landscape of the junction that are added to the local energy barrier. We demonstrate that thermal fluctuations are equivalent to the magnetic field effect, thereby, surprisingly, increasing the energy barrier and further stabilizing the domain wall in the junction at higher temperatures, which is in sharp contrast to ferromagnets or synthetic antiferromagnets. We find that the threshold current density can be further decreased by tilting the junction without affecting the high domain wall stability. Furthermore, we demonstrate that chiral domain walls can be robustly confined within a ferromagnet region sandwiched on both sides by synthetic antiferromagnets and yet can be readily injected into the synthetic antiferromagnet regions by current. Our findings break the aforementioned trade-off, thereby allowing for versatile domain-wall-based memory, and logic, and beyond.