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Monolithically integrated Cu(In,Ga)Se2 mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se2 layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.

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In this paper, we investigate the laser processing of the CIGS thin-film solar cells in the case of the high-speed regime. The modern ultra-short pulsed laser was used exhibiting the pulse repetition rate of 1 MHz. Two main P3 scribing approaches were investigated – ablation of the full layer stack to expose the molybdenum back-contact, and removal of the front-contact only. The scribe quality was evaluated by SEM together with EDS spectrometer followed by electrical measurements. We also modelled the electrical behavior of a device at the mini-module scale taking into account the laser-induced damage. We demonstrated, that high-speed process at high laser pulse repetition rate induced thermal damage to the cell. However, the top-contact layer lift-off processing enabled us to reach 1.7 m/s scribing speed with a minimal device degradation. Also, we demonstrated the P3 processing in the ultra-high speed regime, where the scribing speed of 50 m/s was obtained. Finally, selected laser processes were tested in the case of mini-module scribing. Overall, we conclude, that the top-contact layer lift-off processing is the only reliable solution for high-speed P3 laser scribing, which can be implemented in the future terawatt-scale photovoltaic production facilities.