Abstract. The quantum mechanical effects resulted from the inclusion of nanostructures, represented by quantum wells and quantum dots, in the i-layer of an intermediate band solar cell will be analyzed. We will discuss the role of these specific nanostructures in the increasing of the solar cells efficiency. InAs quantum wells being placed in the i-layer of a gallium arsenide (GaAs) p-i-n cell, we will analyze the quantum confined regions and determine the properties of the eigenstates located therein. Also, we simulate the electroluminescence that occurs due to the nanostructured regions.