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We report measurements of the Hall effect performed on 4 gold films evaporated onto mica substrates where the signal arises primarily from electron-surface scattering. The measurements were performed at low temperatures T (4 K < or = T < or = 50 K) under high magnetic field strengths B (1.5 T < or = B < or = 9 T), with B oriented perpendicular to the films.

We report the Hall effect measured in gold films evaporated onto mica substrates, the samples having an average grain diameter D that ranges between 12 and 174 nm, and a thickness t of approximately 50 nm and 100 nm. The Hall mobility was determined at low temperatures T (4 K ≤ T ≤ 50 K). By tuning the grain size during sample preparation, we discriminate whether the dominant collision mechanism controlling the resistivity of the samples at 4 K is electron-surface or electron-grain boundary scattering, based upon whether the Hall mobility depends linearly on film thickness t or on grain diameter D.

We present a rigorous comparison between resistivity data and theoretical predictions involving the theory of Palasantzas [G. Palasantzas and J. Barnas, Phys. Rev. B 56, 7726 (1997)], and the modified Sheng, Xing, and Wang-fractal theory [R. C. Munoz et al., Phys. Rev. B 66, 205401 (2002)], regarding the resistivity arising from electron scattering by a self-affine fractal surface on gold films using no adjustable parameters. We find that both theories lead to an approximate description of the temperature dependence of the resistivity data. However, the description of charge transport based upon fractal scaling seems oversimplified, and the predicted increase in resistivity arising from electron-surface scattering seems at variance with other experimental results. If the samples are made up of grains such that the mean grain diameter D &gt; ℓ0(300), the electronic mean free path in the bulk at 300 K, then the predicted increase in resistivity at 4 K is of the order of a few percent. This contradicts published measurements of magnetomorphic effects arising from size effects where electron-surface scattering is the dominant electron scattering mechanism at 4 K. On the contrary, if the samples are made out of grains such that D &lt; ℓ0(300), then the dominant electron scattering mechanism controlling the resistivity is not electron-surface scattering but rather electron-grain boundary scattering, and the latter electron scattering mechanism is not included in either theory.