In this work, 65nm NOR flash memory is used for an evaluation of data retention and impact on cell charge based on varying levels of exposure to x-ray waves. A sample of 100 fully tested and configured units were programmed with a physical checkerboard pattern (half programmed, half erased) and exposed to conditions found in industrial x-ray stations. Readouts of the data pattern were done at various stages throughout the experiment and a comparison of cell Vt was performed on a population of worst case cells (lowest Vt on programmed cells, highest Vt on erased cells). Data was collected on a bit by bit basis and plotted as a cumulative probability function. Bakes were also performed to introduce any potential defects not seen initially as part of the exposure -and the readout data was collected for this stage as well. Results indicated there is a correlation on the amount of charge gain and loss seen based on the amount of total radiation incident upon the cells in extreme conditions.