Electron transfer from valence to conduction band states in semiconductors is the basis of modern electronics. Here, attosecond extreme ultraviolet (XUV) spectroscopy is used to resolve this process in silicon in real time. Electrons injected into the conduction band by few-cycle laser pulses alter the silicon XUV absorption spectrum in sharp steps synchronized with the laser electric field oscillations. The observed ~450-attosecond step rise time provides an upper limit for the carrier-induced band-gap reduction and the electron-electron scattering time in the conduction band. This electronic response is separated from the subsequent band-gap modifications due to lattice motion, which occurs on a time scale of 60 ± 10 femtoseconds, characteristic of the fastest optical phonon. Quantum dynamical simulations interpret the carrier injection step as light-field–induced electron tunneling.

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 1020 cm−3. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

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Two-dimensional femtosecond infrared (2DIR) spectroscopy routinely provides insights into molecular structure and ultrafast dynamics in 1-100 μm thick bulk samples. Confinement of molecules to surfaces, gaps, crevices, and other topographic features, frequently encountered on the nanometer length scale, significantly alters their structure and dynamics, affecting physical and chemical properties. Amplification of 2DIR signals by the plasmon-enhanced fields around metal nanostructures can permit structural and dynamics measurements of the confined molecules. Fano resonances, induced by the interaction between laser pulses, plasmon, and vibrational modes significantly distort 2D lineshapes. For different detuning from plasmon resonance, the interference between multiple signal components leads to different line shape asymmetry, which we demonstrate on a set of linear absorption, transient absorption, and 2DIR spectra. An intuitive model used to describe experimental data points to the interference's origin. Our results will facilitate the application of surface-enhanced 2DIR spectroscopy for studies of molecular structure and dynamics in a nanoconfined environment.