No abstract

Recent work on laser-induced crystallization of thin films and nanostructures is presented. Characterization of the morphology of the crystallized area reveals the optimum conditions for sequential lateral growth in a-Si thin films under high-pulsed laser irradiation. Silicon crystal grains of several micrometers in lateral dimensions can be obtained reproducibly.Laser-induced grain morphology change is observed in silicon nanopillars under a transmission electron microscopy (TEM) environment. The TEM is coupled with a near-field scanning optical microscopy (NSOM) pulsed laser processing system. This combination enables immediate scrutiny on the grain morphologies that the pulsed laser irradiation produces. The tip of the amorphous or polycrystalline silicon pillar is transformed into a single crystalline domain via melt-mediated crystallization. The microscopic observation provides a fundamental basis for laser-induced conversion of amorphous nanostructures into coarse-grained crystals.A laser beam shaping strategy is introduced to control the stochastic dewetting of ultrathin silicon film on a foreign substrate under thermal stimulation. Upon a single pulse irradiation of the shaped laser beam, the thermodynamically unstable ultrathin silicon film is dewetted from the glass substrate and transformed to a nanodome. The results suggest that the laser beam shaping strategy for the thermocapillary-induced de-wetting combined with the isotropic etching is a simple alternative for scalable manufacturing of array of nanostructures.