No abstract

No abstract

No abstract

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.

The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al2O3. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al2O3 have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.