High-performance ultraviolet (UV) Schottky photodiodes obtained by growing Pd Schottky contacts on the sol-gel-derived n-ZnO thin films deposited on n-Si substrates have been reported in this paper. The current-voltage (I-V ) measurements of the as-fabricated Schottky photodiodes show an excellent room temperature contrast ratio (i.e., the ratio of the current under UV illumination to the dark current) of ∼5.332 × 10 3 and responsivity (i.e., the parameter characterizing the sensitivity of the device to the UV light) of ∼8.39 A/W at −5 V reverse bias voltage, respectively; when the device is illuminated by an UV source of ∼650 µW output power at ∼365 nm. The measured room temperature contrast ratio and responsivity are believed to be the highest among the reported values in the literature for ZnO thin film-based Schottky photodiodes using sol-gel method.Index Terms-Schottky diode, sol-gel method, thin film.

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