A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al‐coated threads with a native layer of Al2O3 as a resistance switching layer, and carbon fiber as the counter‐electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2–3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal‐insulator‐metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system.

In article number 1605593, Cheol Seong Hwang, Mi Jung Lee, and co‐workers demonstrate a new type of wearable electronic device in which resistive switching memory devices are woven into an electronic textile using a loom, which is similar to weaving normal cloth. Aluminumcoated threads with native aluminum oxide and carbon are chosen for bipolar resistive switching reactions at the interface to create conducting pathways upon applied bias.

Benzothienobenzothiophene (C 8 -BTBT) is a soluble organic small molecule material with high crystallinity resulting from its strong self-organizing properties. In addition, the high mobility and easy fabrication of C 8 -BTBT make it very attractive in terms of organic thin-film transistors. In this work, we made C 8 -BTBT thin films by using the zone-casting method; we also used an organic solvent to treat the devices with solvent vapor annealing to improve the electrical properties. As a result, we confirmed improved mobility, threshold voltage, and subthreshold swing after solvent vapor annealing. To prove the effect of solvent vapor annealing, we used the simultaneous extraction model to extract the contact resistance from the current-voltage curve. We confirmed that the electrical properties improved with decreasing contact resistance.

In this paper, we propose a new time-shared twin memristor crossbar for pattern-recognition applications. By sharing two memristor arrays at different time, the number of memristor arrays can be reduced by half, saving the crossbar area by half, too. To implement the time-shared twin memristor crossbar, we also propose CMOS time-shared subtractor circuit, in this paper. The operation of the time-shared twin memristor crossbar is verified using 3 × 3 memristor array which is made of aluminum film and carbon fiber. Here, the crossbar array is programmed to store three different patterns. When we apply three different input vectors to the array, we can verify that the input vectors are well recognized by the proposed crossbar. Moreover, the proposed crossbar is tested for the recognition of complicated gray-scale images. Here, 10 images with 32 × 32 pixels are applied to the proposed crossbar. The simulation result verifies that the input images are recognized well by the proposed crossbar, even though the noise level of each image is varied from −10 to +10 dB.

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