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Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

Previously we focused on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with two-arm folded integrated resonators for Fourier-optical spatial frequency filtering. The resonator had a round-trip length of 4f, where f is the focal length of the Fourier-transform element (FTE), that is, a cylindrical mirror in-between the orthogonal resonator branches. This 4f set-up can be called "retracted once" due to the reflective filter after 2f ; that is, the 2f path was used forwards and backwards. Now the branches are retracted once more resulting in a compact 1f long linear resonator (called "retracted twice") with a roundtrip length of 2f. One facet accommodates the filter, while the other houses the FTE, now incorporating a film-waveguide lens. The BAL facet with the filter represents both the Fourier-transform plane (after 2f, i.e., one round-trip) as well as the image plane (after 4f, two round-trips). Thus filtering is performed even after 4f, not just after 2f. Experimental results reveal good fundamental TMS for pump currents up to 20% above threshold and a one-dimensional beam quality parameter 2 1D = 1.47. The BALs are made from AlGaInAsSb, but the concept can equally well be employed for BALs of any material system.

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Previously in this journal we have reported on fundamental transverse mode selection (TMS#0) of broad area semiconductor lasers (BALs) with integrated twice-retracted 4f set-up and film-waveguide lens as the Fourier-transform element. Now we choose and report on a simpler approach for BAL-TMS#0, i.e., the use of a stable confocal longitudinal BAL resonator of length L with a transverse constriction. The absolute value of the radius R of curvature of both mirror-facets convex in one dimension (1D) is R = L = 2f with focal length f. The round trip length 2L = 4f again makes up for a Fourier-optical 4f set-up and the constriction resulting in a resonator-internal beam waist stands for a Fourier-optical low-pass spatial frequency filter. Good TMS#0 is achieved, as long as the constriction is tight enough, but filamentation is not completely suppressed.