This work is focused on a polymorphic and crystallographic study of a novel p-type organic semiconductor 2,7-bis(2-(2-methoxyethoxy)ethoxy)benzo[b]benzo [4,5]thieno [2,3-d]thiophene (OEG-BTBT). The well-known BTBT core is functionalized by eight-atom-long oligoethylene glycol side chains. Our results demonstrate the discovery of three crystal forms of the OEG-BTBT molecule, namely, Form I, Form II, and Form III, in different experimental conditions. Crystal structures of Form I and Form III are reported, while only unit cell indexing of Form II could be determined. Form I and Form II are enantiotropically related, and Form II is stable at temperatures higher than 127 °C. The kinetics of transformation to Form II was studied by the Avrami equation. Form III is a solvate crystal form which is rarely observed in the field of organic electronics, and upon release of dichloromethane, it converts to Form I. Furthermore, we studied the mechanical properties of the Form I crystals, which exhibit plastic bending upon applying mechanical stress in the [100] direction. This distinct mechanical behavior is rationalized by the slip layer topology, the intermolecular interactions energies from energy frameworks, and the Hirshfeld surface analysis.

The discovery of new polymorphs opens unique applications for molecular materials, as the physical properties are predominantly influenced by the crystal structure type. Deposition of molecules at surfaces offers a...

Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH 3 CN vapor annealing process, (ii) a doping I 2 /water procedure, and (iii) vapors of I 2 /CH 3 CN to simultaneously dope and anneal the films. After careful analysis of the OFET electrical characteristics and by performing local Kelvin probe force microscopy studies, we found that the vapor annealing process predominantly reduces interfacial shallow traps, while the chemical doping of the OSC film is responsible for the diminishment of deeper traps and promoting a significant reduction of the contact resistance. Remarkably, the devices treated with I 2 /CH 3 CN reveal ideal electrical characteristics with a low level of shallow/deep traps and a very high and almost gate-independent mobility. Hence, this work demonstrates the promising synergistic effects of performing simultaneously a solvent vapor annealing and doping procedure, which can lead to trapfree OSC films with negligible contact resistance problems.

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