Quantum efficiency (QE) enhancement in accelerator technology relevant to antimonide photocathodes (K2CsSb) is achieved by interfacing them with atomically thin 2D crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10%, whereas the long wavelength response at 633 nm (2.0 eV) increases by a relative 36% on average and up to 80% at localized “hot spot” regions when photocathodes are deposited onto graphene‐coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X‐ray diffraction (XRD), and X‐ray fluorescence (XRF) revealed that thickness, crystal orientation, quality, and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest that optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.

It is predicted that the quantum efficiency (QE) of photoelectron emission from metals may be enhanced, possibly by an order of magnitude, through optimized surface texture. Through extensive computational simulations, it is shown that the absorption enhancement in select surface groove geometries may be a dominant contributor to enhanced QE and corresponds to localized Fabry–Perot resonances. The inadequacy of extant analytical models in predicting the QE increase, and suggestions for further improvement, are discussed.

It is shown that the efficiency of photoelectron emission may be enhanced, several-fold, through optimization of photocathode film thickness and appropriate substrate configuration. Such an enhancement is based on a careful consideration of wave interference effects in the film and the consequent modulation of the absorption profiles and electron emission probabilities. The inadequacy of the well-known Lambert-Beer law for modeling photon absorption in thin films is also discussed.

The complexity of photocathode designs and detector materials, and the need to model their performance for short pulse durations, the response to high-frequency photons, the presence of coatings and/or thinness of the absorptive layer, necessitates modifications to three-step and moments models of photoemission that are used in simulation codes. In this study, methods to include input from computationally intensive approaches, such as density functional theory to model optical properties and transfer matrix approaches to treat emission from the surface or transport past coatings, by means of parametric models are demonstrated. First, a technique to accurately represent optical behavior so as to model reflectivity and penetration depth is given. Second, modifications to bulk models arising from the usage of thin film architectures, and a means to rapidly calculate them, are provided. Third, a parameterization to model the impact of wells associated with coatings and surface layers on the transmission probably is given. In all cases, the methods are computationally efficient and designed to allow for including input from numerically intensive approaches that would otherwise be unavailable for simulations.

Protection of free-electron sources has been technically challenging due to lack of materials that transmit electrons while preventing corrosive gas molecules. Two-dimensional materials uniquely possess both of required properties. Here, we report three orders of magnitude increase in active pressure and factor of two enhancement in the lifetime of high quantum efficiency (QE) bialkali photocathodes (cesium potassium antimonide (CsK2Sb)) by encapsulating them in graphene and thin nickel (Ni) film. The photoelectrons were extracted through the graphene protection layer in a reflection mode, and we achieved QE of ~ 0.17% at ~ 3.4 eV, 1/e lifetime of 188 h with average current of 8.6 nA under continuous illumination, and no decrease of QE at the pressure of as high as ~ 1 × 10–3 Pa. In comparison, the QE decreased drastically at 10–6 Pa for bare, non-protected CsK2Sb photocathodes and their 1/e lifetime under continuous illumination was ~ 48 h. We attributed the improvements to the gas impermeability and photoelectron transparency of graphene.