Thermal properties can substantially affect the operation of various electronics and optoelectronics devices based on two-dimensional materials. In this work, we describe our investigation of temperature-dependent thermal conductivity and interfacial thermal conductance of molybdenum disulfide monolayers supported on SiO2/Si substrates, using Raman spectroscopy. We observed that the calculated thermal conductivity (κ) and interfacial thermal conductance (g) decreased with increasing temperature from 62.2 W m(-1) K(-1) and 1.94 MW m(-2) K(-1) at 300 K to 7.45 W m(-1) K(-1) and 1.25 MW m(-2) K(-1) at 450 K, respectively.

Transition metal dichalcogenides (TMDCs) are attractive for variety of nanoscale electronics and optoelectronics devices due to their unique properties. Despite growing progress in the research field of TMDCs, many of their properties are still unknown. In this letter, we report measurements of Raman spectra of rhenium diselenide (ReSe2) and tin diselenide (SnSe2) layered semiconductor nanosheets as a function of temperature (70–400 K). We analyze the temperature dependence of the positions of eight ReSe2 modes and SnSe2 A1g mode. All observed Raman mode shifts exhibit nonlinear temperature dependence at low temperatures which is explained by optical phonon decay process into two or three acoustics phonons. The first order temperature coefficients (χ), determined for high temperatures, of rhenium diselenide Raman modes are in the range between −0.0033 and −0.0118 cm−1/K, whereas χ of tin diselenide A1g mode was −0.0129 cm−1/K. Our findings are useful for further analysis of phonon and thermal properties of these dichalcogenide layered semiconductors.

We present the results of Raman measurements of few-layer black phosphorus in a temperature range between 4 and 400 K. The BP Raman mode positions, widths, and intensity ratios exhibit apparent nonlinear temperature dependences, which we attributed to the phenomenon of optical phonon decay into two or three acoustic phonons. These results pave the way for a deeper understanding of the phonon and thermal properties of black phosphorus.

We present a novel approach for the simultaneous determination of the thermal conductivity κ and the total interface conductance g of supported 2D materials by the enhanced opto-thermal method. We harness the property of the Gaussian laser beam that acts as a heat source, whose size can easily and precisely be controlled. The experimental data for multi-layer graphene and MoS2 flakes are supplemented using numerical simulations of the heat distribution in the Si/SiO2/2D material system. The procedure of κ and g extraction is tested in a statistical approach, demonstrating the high accuracy and repeatability of our method.

In this work, we have prepared a series of polydimethylsiloxane (PDMS) composites containing various graphene flakes loadings (0.02–2 wt%), and their broadband optical properties are being investigated. We demonstrate the tunability and evolution of transmittance and reflection spectra of the composites in a wide spectral range (0.4–200 μm) as a function of graphene content. Using these data we derive the broadband wavelength-dependent absorption coefficient (α) values. Our results show that α is roughly constant in the visible and IR ranges, and, surprisingly, is approximately one order of magnitude lower in the terahertz regime, suggesting different terahertz radiation scattering mechanism in our composite. Our material could be useful for applications in optical communication, sensing or ultrafast photonics.