Using grazing-incidence x-ray diffraction and scanning tunneling microscopy (STM), we show that the thermal decomposition of an electronic-grade wafer of 6H-SiC after annealing at increasing temperatures TA between 1080 and 1320 °C leads to the layer-by-layer growth of unconstrained, heteroepitaxial single-crystalline graphite. The limited width of the in-plane diffraction rod profiles of graphite reveals large terraces, with an average size larger than 200 Å and a very small azimuthal disorientation. The overlayer is unstrained and adopts the crystalline parameter of bulk graphite even at the smallest coverage studied, which corresponds to a single graphene plane, as inferred from the flat out-of-plane diffraction profile. By increasing TA, additional graphene planes can be grown below this graphite layer from the solid-state decomposition of SiC, forming the AB stacking of Bernal graphite. A C-rich precursor is evidenced in STM by an intrinsic (6×6) reconstruction made of ordered ring or starlike structures. The resulting epitaxial film is indistinguishable from a bulk graphite single crystal.

We have studied the phase transitions of a phospholipidic single-bilayer supported on a mica substrate by real-time temperature-controlled atomic force microscopy. We show the existence of two phase transitions in this bilayer that we attribute to two gel (L(beta))/fluid (L(alpha)) transitions, corresponding to the independent melting of each leaflet of the bilayer. The ratio of each phase with temperature and the large broadening of the transitions' widths have been interpreted through a basic thermodynamic framework in which the surface tension varies during the transitions. The experimental data can be fit with such a model using known thermodynamic parameters.

The effect of 3-glycidoxypropyltrimethoxysilane (GOPS) content in poly (3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) dispersions on the properties of films spun cast from these formulations is investigated. It has been found out that the concentration of GOPS has a tremendous, yet gradual impact on the electrical, electrochemical, and mechanical properties of the PEDOT:PSS/GOPS films and that there is an optimum concentration which maximizes a particular feature of the film such as its water uptake or elasticity. The benefits of aqueous stability and mechanical strength with GOPS are to be compensated by an increase in the electrochemical impedance. GOPS aids obtaining excellent mechanical integrity in aqueous media with still highly conducting properties. Moreover, active devices like organic electrochemical transistors that contain 1 wt% GOPS, which is a concentration that leads to film with high electrical conductivity with sufficient mechanical stability and softness, exhibit steady performance over three weeks. These results suggest that variations in the concentration of such an additive like GOPS can enable a facile co-optimization of electrical and mechanical properties of a conducting polymer film for in vivo bioelectronics application.