Micro- and increasingly, nano-fabrication have enabled the miniaturization of atomic devices, from vapor cells to atom chips for Bose-Einstein condensation. Here we present microfabricated planar devices for thermal atomic beams. Etched microchannels were used to create highly collimated, continuous rubidium atom beams traveling parallel to a silicon wafer surface. Precise, lithographic definition of the guiding channels allowed for shaping and tailoring the velocity distributions in ways not possible using conventional machining. Multiple miniature beams with individually prescribed geometries were created, including collimated, focusing and diverging outputs. A “cascaded” collimator was realized with 40 times greater purity than conventional collimators. These localized, miniature atom beam sources can be a valuable resource for a number of quantum technologies, including atom interferometers, clocks, Rydberg atoms, and hybrid atom-nanophotonic systems, as well as enabling controlled studies of atom-surface interactions at the nanometer scale.

Micromechanical resonators with ultra-low energy dissipation are essential for a wide range of applications, such as navigation in GPS-denied environments. Routinely implemented in silicon (Si), their energy dissipation often reaches the quantum limits of Si, which can be surpassed by using materials with lower intrinsic loss. This paper explores dissipation limits in 4H monocrystalline silicon carbide-on-insulator (4H-SiCOI) mechanical resonators fabricated at wafer-level, and reports on ultra-high quality-factors (Q) in gyroscopic-mode disk resonators. The SiC disk resonators are anchored upon an acoustically-engineered Si substrate containing a phononic crystal which suppresses anchor loss and promises QANCHOR near 1 Billion by design. Operating deep in the adiabatic regime, the bulk acoustic wave (BAW) modes of solid SiC disks are mostly free of bulk thermoelastic damping. Capacitively-transduced SiC BAW disk resonators consistently display gyroscopic m = 3 modes with Q-factors above 2 Million (M) at 6.29 MHz, limited by surface TED due to microscale roughness along the disk sidewalls. The surface TED limit is revealed by optical measurements on a SiC disk, with nanoscale smooth sidewalls, exhibiting Q = 18 M at 5.3 MHz, corresponding to f · Q = 9 · 1013 Hz, a 5-fold improvement over the Akhiezer limit of Si. Our results pave the path for integrated SiC resonators and resonant gyroscopes with Q-factors beyond the reach of Si.

No abstract

No abstract

No abstract