A Ge/Si heterojunction light emitting diode with a p+-Ge/i-Ge/N+–Si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on N+–Si substrate. The device had a good I-V rectifying behavior. Under forward bias voltage ranging from 1.1 to 2.5 V, electroluminescence around 1565 nm was observed at room temperature. The mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. The results indicate that germanium is a potential candidate for silicon-based light source material.

Radiative cooling can make the selective emitter cool below ambient temperature without any external energy. Recent advances in photonic crystal and metamaterial technology made a high-efficiency selective emitter achievable by precisely controlling the emitter’s Infrared emission spectrum. However, the high cost of the photonic crystals and meta-materials limit their application. Herein, an efficient bilayer selective emitter is prepared based on the molecular vibrations of functional nanoparticles. By optimizing the volume fraction of the functional nanoparticles, the bilayer selective emitter can theoretically cool 36.7 °C and 25.5 °C below the ambient temperature in the nighttime and daytime, respectively. Such an efficient cooling performance is comparable with the published photonic crystal and metamaterial selective emitters. The rooftop measurements show that the bilayer selective emitter is effective in the ambient air even under direct sunlight. The relatively low cost and excellent cooling performance enable the bilayer selective emitter to have great potential for a practical purpose.