Oxygen plasma treatment of poly(dimethylsiloxane) (PDMS) thin films produced a hydrophilic surface that was biocompatible and resistant to biofouling in microfluidic studies. Thin film coatings of PDMS were previously developed to provide protection for semiconductor-based microoptical devices from rapid degradation by biofluids. However, the hydrophobic surface of native PDMS induced rapid clogging of microfluidic channels with glial cells. To evaluate the various issues of surface hydrophobicity and chemistry on material biocompatibility, we tested both native and oxidized PDMS (ox-PDMS) coatings as well as bare silicon and hydrophobic alkane and hydrophilic oligoethylene glycol silane monolayer coated under both cell culture and microfluidic studies. For the culture studies, the observed trend was that the hydrophilic surfaces supported cell adhesion and growth, whereas the hydrophobic ones were inhibitive. However, for the fluidic studies, a glass-silicon microfluidic device coated with the hydrophilic ox-PDMS had an unperturbed flow rate over 14 min of operation, whereas the uncoated device suffered a loss in rate of 12%, and the native PDMS coating showed a loss of nearly 40%. Possible protein modification of the surfaces from the culture medium also were examined with adsorbed films of albumin, collagen, and fibrinogen to evaluate their effect on cell adhesion.

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n -GaN/sapphire (0001): Doping dependenceThe thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having thicknesses of 3-4 lm was investigated using time domain thermoreflectance. Despite possessing carrier concentrations ranging across 3 decades (10 15 -10 18 cm -3 ), n-type layers exhibit a nearly constant thermal conductivity of 180 W/mK. The thermal conductivity of p-type epilayers, in contrast, reduces from 160 to 110 W/mK with increased doping. These trends-and their overall reduction relative to bulk-are explained leveraging established scattering models where it is shown that, while the decrease in p-type layers is partly due to the increased impurity levels evolving from its doping, size effects play a primary role in limiting the thermal conductivity of GaN layers tens of microns thick. Device layers, even of pristine quality, will therefore exhibit thermal conductivities less than the bulk value of 240 W/mK owing to their finite thickness. Published by AIP Publishing.

The annealing of nickel-coated porous carbon structures results in a new three dimensional nanostructured graphene encapsulated nickel core-shell electrode. A highly interdependent and dynamic process is observed that results in the complete reversal of the spatial orientations of the two component system after the annealing process. We examine the mechanism of carbon diffusion and observe unexpected morphological changes of the nickel in response to carbon crystallization. The new nickel-graphene core-shell electrode demonstrates excellent electrochemical properties with promising applications in micro-batteries and biosensors.