Diamond-like carbon(DLC) films are of considerable research interests because of their widespread applications as protective coatings in areas such as magnetic storage disks, biomaterial coatings and as micro-electromechanical devices(MEMs) Although DLC films have been considered as a strong candidate for various applications due to its excellent mechanical properties, their poor adhesion on tool steels limits the applications. In order to overcome this drawback, some ideas were introduced. Recently, ion implantation was used to improve the adhesion between thin film and substrate. In this work, we investigated effect of ion implantation on the adhesion strength of DLC film as a function of ion does and implanted energies Ti and W ions were implanted on the Si-wafer and WC-CO substrates, then DLC films were deposited by ion beam deposition method. A CSEM-REVETEST scratch tester was used to assess the adhesion characteristics. From results, the adhesion strength of films was improved as increasing ion implantation energy, however there was no significant with ion dose. Further results, including morphology and compositional variation at the different ion energies and doses, will be presented.Diamond and diamond like carbon (DLC) films were deposited on silicon wafer at relatively low substrate temperatures rangmg from 175 "C 275 "C by d.c. plasma chemical vapor deposition. Substrates were placed on a molybdenum cap holder enveloped by a controlled heater rated at 200 watts.Hydrogen (Hz) and methane (CHI) were used as gas reactants in varying ratios from 1.5% volume CHI in a total gas filling pressure of 10 Torr. Deposition times ranged from 5 to 15 hours. Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy confirmed the produced films.The Raman and XRD results indicating the transition from DLC to diamond film under certain deposition conditions are discussed via a model involving the reaction of hydrogen in the growth process of these film.

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