High-Voltage MOSFETs are essential devices for complementing and extending the domains of application of any core technology including low-power, low-voltage CMOS. In this paper, we propose and describe advanced Extended-Drain MOSFETs, designed, processed and characterized in ultrathin body and buried oxide Fully Depleted Silicon on Insulator technology (UTBB-FDSOI). These transistors have been implemented in two technology nodes (28 nm and 14 nm) with different silicon film and buried oxide thicknesses (TSi < 10nm and TBOX ≤ 25nm). Our innovative concept of Dual Ground Plane (DGP) provides RESURF-like effect (reduced surface field) and offers additional flexibility for HVMOS integration directly in the ultrathin film of the FDSOI wafer. In this configuration, the primary back-gate controls the threshold voltage (VTH) to ensure performance and low leakage current. The second back-gate, located underneath the drift region, acts as a field plate enabling the improvement of the ON resistance (RON) and breakdown voltage (BV). The trade-off RON.S versus BV is investigated as a function of doping level, length and thickness of the drift region. We report promising results and discuss further developments for successful integration of high-voltage MOSFETs in ultrathin CMOS FDSOI technology.

No abstract

We investigate a promising high-voltage MOSFET (HVMOS) fabricated in the leading edge 14nm Fully-Depleted Silicon-On-Insulator technology (FDSOI). We focus on a variant of the Extended-Drain MOSFET (EDMOS) on SOI which features Ultra-Thin Body and Buried oxide (UTBB) and Dual Ground Plane configuration (DGP). The independent biasing of two different ground planes located under the device enables, without film doping, to control separately the electrostatic properties of the channel and the drift regions. Electrical characteristics such as breakdown voltage and specific onresistance are explored for different layout geometries and backgate voltage. Encouraging results of the DGP EDMOS in 14nm FDSOI are presented for 5V power management.