The stability of the surface of in situ cleaved black phosphorus crystals upon exposure to atmosphere is investigated with synchrotron-based photoelectron spectroscopy. After 2 days atmosphere exposure a stable subnanometer layer of primarily P2O5 forms at the surface. The work function increases by 0.1 eV from 3.9 eV for as-cleaved black phosphorus to 4.0 eV after formation of the 0.4 nm thick oxide, with phosphorus core levels shifting by <0.1 eV. The results indicate minimal charge transfer, suggesting that the oxide layer is suitable for passivation or as an interface layer for further dielectric deposition.

Low-cost X-ray detectors with high performance, durability, and flexibility, are required for a wide range of applications in several fields, such as medical (diagnostic radiology, imaging, etc.), nondestructive testing (radioscopic inspections, radiography testing, etc.), security and defence (baggage/body scanning systems, paper mail, etc.), nuclear and radiation industries (nuclear power plants, research reactors, users of nuclear gauges, etc.), and research and development. [1] X-ray detection using semiconductors, based on the direct generation of electrical signals by X-rays (i.e., direct scheme), offers better spatial resolution and a simpler route than indirect schemes, in which X-rays are converted into photons by scintillating phosphors before detection by photodiode arrays. [2] Currently, the conventional materials used for direct conversion of X-rays include stabilized amorphous Se (α-Se), PbI 2 , HgI 2 , CdTe, and CdZnTe. [3] Metal halide perovskites represent a family of the most promising materials for fascinating photovoltaic and photodetector applications due to their unique optoelectronic properties and much needed simple and low-cost fabrication process. The high atomic number (Z) of their constituents and significantly higher carrier mobility also make perovskite semiconductors suitable for the detection of ionizing radiation. By taking advantage of that, the direct detection of soft-X-ray-induced photocurrent is demonstrated in both rigid and flexible detectors based on all-inorganic halide perovskite quantum dots (QDs) synthesized via a solution process. Utilizing a synchrotron soft-X-ray beamline, high sensitivities of up to 1450 µC Gy air −1 cm −2 are achieved under an X-ray dose rate of 0.0172 mGy air s −1 with only 0.1 V bias voltage, which is about 70-fold more sensitive than conventional α-Se devices. Furthermore, the perovskite film is printed homogeneously on various substrates by the inexpensive inkjet printing method to demonstrate large-scale fabrication of arrays of multichannel detectors. These results suggest that the perovskite QDs are ideal candidates for the detection of soft X-rays and for large-area flat or flexible panels with tremendous application potential in multidimensional and different architectures imaging technologies.

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits [4], which would necessitate electric field-switched materials with conventional and topological bandgaps much greater than room temperature, significantly greater than proposed to date [6-8]. Topological Dirac semimetals (TDS) are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases [3,10-16]. Here we use scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES) to show that mono-and bilayer films of TDS Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the absence of electric field. Upon application of electric field by doping with potassium or by close approach of the STM tip, the bandgap can be completely closed then re-opened with conventional gap greater than 100 meV. The large bandgaps in both the conventional and quantum spin Hall phases, much