In this work, the prospects of integrating terahertz (THz) time-domain spectroscopy (TDS) within polymer-based microfluidic platforms are investigated. The work considers platforms based upon the polar polymers polyethylene terephthalate (PET), polycarbonate (PC), polymethyl-methacrylate (PMMA), polydimethylsiloxane (PDMS), and the nonpolar polymers fluorinated ethylene propylene (FEP), polystyrene (PS), high-density polyethylene (HDPE), and ultra-high-molecular-weight polyethylene (UHMWPE). The THz absorption coefficients for these polymers are measured. Two microfluidic platforms are then designed, fabricated, and tested, with one being based upon PET, as a representative high-loss polar polymer, and one being based upon UHMWPE, as a representative low-loss nonpolar polymer. It is shown that the UHMWPE microfluidic platform yields reliable measurements of THz absorption coefficients up to a frequency of 1.75 THz, in contrast to the PET microfluidic platform, which functions only up to 1.38 THz. The distinction seen here is attributed to the differing levels of THz absorption and the manifestation of differing f for the systems. Such findings can play an important role in the future integration of THz technology and polymer-based microfluidic systems.

This Letter analyzes photoconductive (PC) terahertz (THz) emitters based on the semi-insulating (SI) forms of GaAs and InP. The dependencies of the emitters are studied under the extremes of the bias field and pump fluence to reveal the underlying physics of charge carrier photoexcitation, transport, and emission. The bias field dependence shows that SI-GaAs PC THz emitters are preferentially subject to space-charge-limited current, under the influence of trap states, while SI-InP PC THz emitters are preferentially subject to sustained current, due to a prolonged charge carrier lifetime and the ensuing joule heating. The pump fluence dependence shows space-charge and near-field screening for all emitters, with SI-GaAs predisposed to near-field screening (under the influence of transient mobility) and SI-InP predisposed to space-charge screening. Such findings can support a deeper understanding of the underlying physics and optimal performance of SI-GaAs and SI-InP PC THz emitters.

The proposed work introduces time-captured Raman and terahertz spectroscopic analyses as orthogonal probes of intramolecular and intermolecular modes in biomolecular structures. The work focuses on glucose given the complexity and dynamics of its anomeric conversion and crystallization. The Raman analyses capture the dynamics of its intramolecular modes – revealing conversion between α and β anomers. At the same time, the terahertz analyses capture the dynamics of its intermolecular modes – showing an evolution from amorphous to crystalline morphology. It is shown that time-captured Raman and terahertz spectroscopy together render a more complete depiction, and deeper understanding, of the biomolecular structure of glucose.