In this work, we report on the structural and electronic properties of amorphous In2O3 obtained with ab initio molecular dynamics. Our results show crystal-like short range InO6 polyhedra having average In-O distance consistent with x-ray spectroscopy data. Structural disorder yields band tailing and localized states, which are responsible of a strong reduction of the electronic gap. Most importantly, the appearance of a peculiar O–O bond imparts n-type character to the amorphous compound and provides contribution for interpreting spectroscopic measurements on indium based oxidized systems. Our findings portray characteristic features to attribute transparent semiconductive properties to amorphous In2O3.

We have investigated the structural and electronic properties of the methyl-terminated Si(111) surface using first-principles calculations at the semilocal density functional theory level, inclusive of semiempirical dispersion forces between the methyl groups. In agreement with previous ab initio studies and consistent with low-energy electron diffraction measurements, we find that the most stable geometry corresponds to a (1 × 1), symmetric pattern, with methyl groups vertically bound to the Si substrate. Therefore, our computed scanning tunneling microscopy (STM) images exhibit three-fold symmetry at variance from those reported by recent experiments. The main contribution to the tunneling current comes from surface resonant states close to the Fermi level that are very weakly affected by self-energy corrections within many body perturbation theory. Our computed current−voltage profiles are in qualitative agreement with experiment. We suggest that the differences between computed and measured STM patterns may arise from tip−substrate interactions.

In the present work we study the main physical properties of a gas of κ-deformed bosons described through the statistical distribution function

Synonyms Electrostatic RF MEMS switches; Micromechanical switches; RF MEMS switches Definition Capacitive micro-electro-mechanical systems (MEMS) switches are a special type of micromachined switches that control radio frequency (RF) signal paths in microwave and millimeter-wave circuits through mechanical motion and contact. Overview Capacitive and direct current (dc)-contact MEMS switches are among the most important micromachined devices for high-frequency applications due to their near-ideal RF performance. Dc-contact switches function similarly to conventional relays: micromachined beams or plates move under the influence of an appropriately applied force (e.g., electrostatic force) to open or close a metal-to-metal contact. While micromachined beams or plates are also utilized in capacitive switches, these switches rely on metal-to-dielectric contacts to implement their on and off states. Capacitive switches are particularly attractive for demanding high-frequency communications, electronic warfare, and radar systems due to their ultralow loss (<0.1-0.2 dB up to 40 GHz), high isolation (>20-50 dB for frequencies beyond 10 GHz), very high linearity (>66 dBm third-order intercept point), and near-zero power consumption ($tens of nJ per

The adatom kinetics processes of adsorption and diffusion for In and N species on nonpolar InN a- and m-planes have been studied using ab initio density functional theory calculations. Our results reveal remarkable in-plane anisotropic potential energy surfaces, consistently with experimental data on vertically c-oriented one-dimensional nanostructure formation; we demonstrate that lateral wall morphology strongly determinates the contribution of diffusion to the growth process.