Materials exhibiting high energy/power density are currently needed to meet the growing demand of portable electronics, electric vehicles and large-scale energy storage devices. The highest energy densities are achieved for fuel cells, batteries, and supercapacitors, but conventional dielectric capacitors are receiving increased attention for pulsed power applications due to their high power density and their fast charge–discharge speed. The key to high energy density in dielectric capacitors is a large maximum but small remanent (zero in the case of linear dielectrics) polarization and a high electric breakdown strength. Polymer dielectric capacitors offer high power/energy density for applications at room temperature, but above 100 °C they are unreliable and suffer from dielectric breakdown. For high-temperature applications, therefore, dielectric ceramics are the only feasible alternative. Lead-based ceramics such as La-doped lead zirconate titanate exhibit good energy storage properties, but their toxicity raises concern over their use in consumer applications, where capacitors are exclusively lead free. Lead-free compositions with superior power density are thus required. In this paper, we introduce the fundamental principles of energy storage in dielectrics. We discuss key factors to improve energy storage properties such as the control of local structure, phase assemblage, dielectric layer thickness, microstructure, conductivity, and electrical homogeneity through the choice of base systems, dopants, and alloying additions, followed by a comprehensive review of the state-of-the-art. Finally, we comment on the future requirements for new materials in high power/energy density capacitor applications.

Introducing controlled electrical homogeneity can be an effective way to obtain ultrahigh energy storage density in lead-free multilayers.

Monitoring and control of temperature is of paramount importance in every part of our daily life. Temperature sensors are ubiquitous not only in domestic and industrial activities but also in laboratory and medical procedures. An assortment of temperature sensors is commercially available for such purposes. They range from metallic thermocouples to resistive temperature detectors and semiconductive ceramics, showing a negative temperature coefficient of resistance (NTCR). NTCR ceramic sensors occupy a respected market position, because they afford the best sensitivity and accuracy at the lowest price. Despite the enormous commercial success of NTCR thermistors, this area of advanced functional ceramics has not been recently reviewed. Nearly 100 years elapsed between the first report of NTCR behavior and the fabrication of NTCR devices. The manufacture of the first NTCR ceramic thermistors was problematic, as often the devices suffered from poor stability and nonreproducibility. Before NTCR ceramics could be seriously considered for mass production of thermistors, it was necessary to devote a large amount of R&D effort to study the nature of their semiconductivity and understand the influence of impurities/dopants and heat treatments on their electrical characteristics, particularly in their time dependence resistivity (aging). Simultaneously, from a technological viewpoint it was important to develop methods enabling reliable and permanent electrical contacts, and design suitable housing for ceramics, in order to preserve their electrical properties under conditions of variable oxygen partial pressure and humidity. These topics are reviewed in this article from an industrial perspective. Examples of common applications of NTCR thermistors and future challenges are also outlined.

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Bismuth ferrite-based lead-free multilayers with a high recoverable energy density of 6.74 J cm−3 and an efficiency of 77%, stable up to 125 °C.