Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two-and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope's vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on−off current ratio of ∼10 1 , a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm 2 /(V•s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10 −2 Ω•cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

Determining the metallicity and semiconductivity of a multi-walled carbon nanotube (MWCNT) bundle plays a particularly vital role in its interconnection with the metal electrode of an integrated circuit. In this paper, an effective method is proposed to determine the electrical transport properties of an MWCNT bundle using a current–voltage characteristic curve during its electrical breakdown. We established the reliable electrical nanoscale contact between the MWCNT bundle and metal electrode using a robotic manipulation system under scanning electron microscope (SEM) vacuum conditions. The experimental results show that the current–voltage curve appears as saw-tooth-like current changes including up and down steps, which signify the conductance and breakdown of carbon shells in the MWCNT bundle, respectively. Additionally, the power law nonlinear behavior of the current–voltage curve indicates that the MWCNT bundle is semiconducting. The molecular dynamics simulation explains that the electron transport between the inner carbon shells, between the outermost carbon shells and gold metal electrode and between the outermost carbons shells of two adjacent individual three-walled carbon nanotubes (TWCNTs) is through their radial deformation. Density functional theory (DFT) calculations elucidate the electron transport mechanism between the gold surface and double-wall carbon nanotube (DWCNT) and between the inner and outermost carbon shells of DWCNT using the charge density difference, electrostatic potential and partial density of states.

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Because of their unique mechanical and electrical properties, zinc oxide (ZnO) nanowires are used widely in microscopic and nanoscopic devices and structures, but characterizing them remains challenging. In this paper, two pick-up strategies are proposed for characterizing the electrical properties of ZnO nanowires using SEM equipped with a nanomanipulator. To pick up nanowires efficiently, direct sampling is compared with electrification fusing, and experiments show that direct sampling is more stable while electrification fusing is more efficient. ZnO nanowires have cut-off properties, and good Schottky contact with the tungsten probes was established. In piezoelectric experiments, the maximum piezoelectric voltage generated by an individual ZnO nanowire was 0.07 V, and its impedance decreased with increasing input signal frequency until it became stable. This work offers a technical reference for the pick-up and construction of nanomaterials and nanogeneration technology.