We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped (decrease–increase–decrease) temperature dependence of the peak energy (Ep) for InGaN-related PL with increasing temperature: Ep redshifts in the temperature range of 10–70 K, blueshifts for 70–150 K, and redshifts again for 150–300 K with increasing temperature. In addition, when Ep redshifts, the spectral width is observed to narrow, while when Ep blueshifts, it broadens. From a study of the integrated PL intensity as a function of temperature, it is found that thermionic emission of photocarriers out of local potential minima into higher energy states within the wells is the dominant mechanism leading to the thermal quenching of the InGaN-related PL. We demonstrate that the temperature-induced S-shaped PL shift is caused by a change in the carrier dynamics with increasing temperature due to inhomogeneity and carrier localization in the InGaN/GaN MQWs.

Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

Solid‐state lighting has made tremendous progress this past decade, with the potential to make much more progress over the coming decade. In this article, the current status of solid‐state lighting relative to its ultimate potential to be “smart” and ultra‐efficient is reviewed. Smart, ultra‐efficient solid‐state lighting would enable both very high “effective” efficiencies and potentially large increases in human performance. To achieve ultra‐efficiency, phosphors must give way to multi‐color semiconductor electroluminescence: some of the technological challenges associated with such electroluminescence at the semiconductor level are reviewed. To achieve smartness, additional characteristics such as control of light flux and spectra in time and space will be important: some of the technological challenges associated with achieving these characteristics at the lamp level are also reviewed. It is important to emphasise that smart and ultra‐efficient are not either/or, and few compromises need to be made between them. The ultimate route to ultra‐efficiency brings with it the potential for smartness, the ultimate route to smartness brings with it the potential for ultra‐efficiency, and the long‐term ultimate route to both might well be color‐mixed RYGB lasers.

Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.

GaInN LEDs with a six‐layer graded‐ refractive‐index antireflection coating made entirely of indium tin oxide (ITO) are demonstrated to have 24.3 % higher light output than LEDs with dense ITO coating. The increased light‐output of the LEDs with graded‐refractive‐index antireflection coating is attributed to the virtual elimination of Fresnel reflection and surface roughening of low‐refractive index ITO.