We propose a novel technique for the removal of heavy metal waste from contaminated water. Our method consists in using dielectrophoresis (DEP) to trap hydroxyapatite (HAP) particles of 1 microm size in water after they have adsorbed heavy metal (Pb, Zn, Cu, Co and Cr). Although HAP can adsorb heavy metals in water and as such offers great promise as a waste-cleaning tool , one of the current challenges is the efficient removal of the HAP particles once they have adsorbed the heavy metals. We show in this paper that DEP can be used to concentrate such particles in certain regions, thus rendering the rest of the solution volume nearly free of contaminated particles. We present here both experimental and numerical results for suspensions at low concentrations.

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The majority of extreme ultraviolet (EUV) lithography mask blank defects originate from chemical mechanical polishing (CMP) of the substrate. The fact that CMP has not yet been able to yield EUV substrates with low defect counts highlights the challenges of polishing doped fused silica surfaces. Here we investigate alternative techniques based on processing either the substrate or coatings of amorphous silicon thin films and inorganic metal oxides. In particular, we evaluate a novel polymer-based non-abrasive a-Si CMP process, a photo-induced dry etching of substrate protrusions, a smoothing coat of spin-on or capillary coated Inpria metal oxide solution, CO2 laser polishing of the substrate surface, and annealing an a-Si thin film surface in reducing atmospheres. Although CMP still remains the best process with respect to overall process integration, these techniques have the potential to support CMP in solving the substrate defectivity issue and help pave the way to commercializing EUV mask blanks