Direct measurement of strain in an individual leading-edge p-channel field effect transistor embedded with SiGe was carried out using a synchrotron x-ray source. Diffraction space maps of these scans from two nonparallel reflecting planes, (004) and (115), detected the presence of strain in the channel. Detailed analysis showed that a maximum strain occurred at the top with gradual decay towards the substrate. Strain in the channel is relieved by formation of tilt boundary at the Si–SiGe interface. The lattice parameters in two directions are derived from measured data and the strain is calculated under the plane strain condition.

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The conditions for the metalorganic molecular beam epitaxial growth of Hgl_xCd Te ( x = 0.18-0.32) alloys at very low growth temperatures (T < 150~ have been optimized by correlating the surface properties and crystalline perfection with the incident Hg flux. A window for growth has been defined for x = 0.18, 0.23, and 0.32. A thermodynamic model has been developed to account for void formation. A neural net model has been used for the first time to model the dependence of void density on the Hg flux and the x-ray rocking curve widths on growth parameters. The combination of these two complementary modeling techniques allows for a flexible process optimization to be carried out with a minimum effort spent in calibration runs.

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