The broad tunability of the energy band gap through size control makes colloidal quantum dots (QDs) promising for the development of photovoltaic devices. Large-size lead sulfide (PbS) QDs, exhibiting a narrow energy band gap, are particularly interesting as they can be used to augment perovskite and c-Si solar cells due to their complementary NIR absorption. However, their complex surface chemistry makes them difficult to process for the development of solar cells. The shape of the QDs transformed from octahedron to cuboctahedron as their size increases, a phenomenon guided by surface energy minimization. As a result, the surface properties change drastically for large-size QDs, which exhibit nonpolar (200) facets and polar (111) facets, as opposed to only (111) facets in small-size QDs. Recent advancements in solution-phase surface passivation strategies, used for the development of high-performance solar cells using the small size and wide band gap QDs, failed to translate a similar enhancement in the case of large-size and narrow band gap QDs. Here, we report a hybrid passivation strategy for large-size and narrow band gap QDs to passivate both ( 111) and ( 200) facets, respectively, using inorganic lead triiodide (PbI 3 − ) and organic 3-chloro-1-propanethiol (CPT). By employing charge balance calculation, we identified the desired narrow band gap for QDs to complement the perovskite and c-Si absorption. The distinct choice of the organic ligand CPT enhances the colloidal stability of QDs in the solution phase and improves surface passivation to stop QD fusion in solid films. Photophysical properties show narrower excitonic and emission peaks and a reduction in the Stokes shift. Hybrid passivation leads to a 94% increase in the power conversion efficiency of solar cells and a 74% increase in the external quantum efficiency at the excitonic peak.

RetractionThis article was mistakenly published twice. For this reason this duplicate article has now been retracted. For citation purposes please cite the original: http://www.inljournal.com/?_action=articleInfo&article=21 Abstract Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM) and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

Conventional memory technologies are facing enormous problems with downscaling, and are hence unable to fulfill the requirement of big data storage generated by a huge explosion of digital information. A resistive random access memory device (RRAM) is one of the most emerging technologies for next-generation computing data storage owing to its high-density stacking, ultrafast switching speed, high non-volatility, multilevel data storage, low power consumption, and simple device structure. In this work, colloidal MoS2 quantum dots (QDs) embedded in an insulating matrix of poly-(4vinylpyridine) (PVP) were used as an active layer to fabricate a RRAM device. The MoS2 QDs-PVP based RRAM device reveals an excellent nonvolatile resistive switching (RS) behavior with a maximum current on-off ratio (ION/IOFF) of 105. High endurance, long retention time, and successive “write-read-erase-read” cycles indicate high-performance RRAM characteristics. The ultimate power consumption by this RRAM device is considerably low for energy saving. In addition, the MoS2 QDs-PVP based device shows RS behavior even at 130 °C. High ION/IOFF, low operating power, high endurance, long retention time, and excellent stability with temperatures reveal that the MoS2 QDs-PVP based device can be a promising candidate for high-performance low power RRAM devices that can be operated at relatively higher temperatures.