We report strong second-harmonic generation (SHG) from 2H polytype of multilayer Tin diselenide (SnSe2) for fundamental excitation close to the indirect band-edge in the absence of excitonic resonances. Comparison of SHG and Raman spectra from exfoliated SnSe2 flakes of different polytypes shows strong (negligible) SHG and Raman Eg mode at 109 cm−1 (119 cm−1), consistent with 2H (1T) polytypes. The difference between the A1g–Eg Raman peak positions is found to exhibit significant thickness dependent for the 1T form, which is found to be absent for the 2H form. The observed thickness dependence of SHG with rapid oscillations in signal strength for small changes in flake thickness are in good agreement with a nonlinear wave propagation model considering nonlinear polarization with alternating sign from each monolayer. The nonlinear optical susceptibility extracted from SHG signal comparison with standard quartz samples for 1040 nm excitation is found to be more than 4-times higher than that at 1550 nm. This enhanced nonlinear response at 1040 nm is attributed to the enhanced nonlinear optical response for fundamental excitation close to the indirect band-edge. We also study SHG from heterostructures of monolayer MoS2/multilayer SnSe2 which allows us to unambiguously compare the nonlinear optical response of SnSe2 with MoS2. We find the SHG signal and any interference effect in the overlap region to be dominated by the SnSe2 layer for the excitation wavelengths considered. The comparison of SHG from SnSe2 and MoS2 underscores that the choice of the 2D material for a particular nonlinear optical application is contextual on the wavelength range of interest and its optical properties at those wavelengths. The present works further highlights the usefulness of near band-edge enhancement of nonlinear processes in emerging 2D materials towards realizing useful nanophotonic devices.

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We report two Quantum Random Number Generator (QRNG) schemes based on Amplified Spontaneous Emission (ASE) to address the problems of previous ASE based QRNGs -(1) costlier and commercially difficult-to-get components, (2) higher electrical noise in the faster detectors. Our ASE-ASE-beating based QRNG, built using commercially available components, clocks in 7.437Gbps random number generation rate. Our second QRNG scheme based on the beating of LASER and ASE of similar power generates random bits at a speed of 7.80Gbps. The minimum entropy values for these schemes are 5.21 and 5.4990 respectively for an 8-bit ADC. The second scheme reports higher entropy because its random numbers has a higher variance than first one. We use the Toeplitz extractor on the raw bits to generate unbiased random numbers and verify them with the help of industry-standard statistical tests.

We experimentally demonstrate a novel quasi-bound state in the continuum (BIC) resonance in the mid-infrared wavelength region with the resonant electric field confined as a slot mode within a low-refractive-index medium sandwiched between high-index layers. The structures studied here comprise coupled amorphous germanium guided-mode resonance (GMR) structures with a top one-dimensional grating layer and bottom uniform layer separated by a low-index silicon nitride layer. The slot-mode profile within the silicon nitride layer with mode field confinement > 30 % is achieved as a solution to the electromagnetic wave propagation through the coupled GMR structure with the dominant field component being perpendicular to the layers. The quasi-BIC resonance in symmetric 1D grating structures can be observed even at normal incidence when considering a realistic excitation beam with finite angular spread. The measured transmission peak is found to redshift (remain almost unchanged) under classical (full-conical) mounting conditions. The highest quality factor of ∼ 400 is experimentally extracted at normal incidence under a classical mounting condition with a resonance peak at 3.41 μm wavelength. Such slot-mode GMR structures with appropriately chosen low-index intermediate layers can find applications in resonantly enhanced sensing and active photonic devices.

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