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We report on the current density and failure mechanism of bridged Si nanowires epitaxially grown between single crystal Si electrodes. Nanowires were found to handle high threshold current density > 10 5 A/cm 2 before exponentially increasing joule heating increases the resistivity and contributes to a positive feedback loop of thermally induced failure. The physical failure at the center of the bridged nanowires is in agreement with published temperature profile along the nanowire due to Joule heating. It is also an indication of homogeneity and low contact resistance in our bridged nanowire, a desirable property in interfacing nanowires.

The performance of an optical wideband wavelength division multiplexed (WDM) communication system is analyzed considering the effects of stimulated Raman scattering, fiber attenuation and chromatic dispersion. Improved models for the Raman gain and the fiber attenuation constant are proposed, which yield better and reliable performance results of the WDM system. Effect of fiber chromatic dispersion is also investigated and it is observed that dispersion can suitably be selected to overcome the limitations imposed by the stimulated Raman scattering phenomenon.