Abstract-Silicon avalanche photodiode (APD) was fabricated by standard 0.18 μm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the existent of guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast it shows lower in responsivity. For the first time, an optimizing of electrode spacing, detection area and the PAD size for RF probing shows an enhancement of the bandwidth. The detection area and the PAD size for RF probing are reduced to 10 x 10 μm² and 30 x 30 μm², respectively, to decrease the device capacitance, the spacing of interdigital electrode is narrowed to 0.84 μm to decrease carrier transit time, and by cancelling the carriers photo-generated in the deep layer and the substrate because the carriers are slow diffusion carriers. As a result, the maximum bandwidth of 8.0 GHz was achieved along with gain-bandwidth product of 280 GHz.