Silicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm-1. Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides. © 2003 Elsevier B.V. All rights reserved

In this paper, we report experimental and theoretical investigations on tuning of the surface plasmon-exciton coupling by controlling the plasmonic mode damping, which is defined by the plasmonic layer thickness. The results reveal the formation of plasmon-exciton hybrid state characterized by a tunable Rabi splitting with energies ranging from 0 to 150 meV. Polarization-dependent spectroscopic reflection measurements were employed to probe the dispersion of the coupled system. The transfer matrix method and analytical calculations were used to model the self-assembled J-aggregate/metal multilayer structures in excellent agreement with experimental observations. © 2012 American Physical Society

A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence. Polarization splitting is achieved by making use of this geometry-induced birefringence. In this work, we demonstrate polarization splitting in devices as short as 120 μm. Even smaller devices can be made using submicron-thick Si waveguides. © 2005 IEEE

We have demonstrated slow propagation of surface plasmons on metallic Moiré surfaces. The phase shift at the node of the Moiré surface localizes the propagating surface plasmons and adjacent nodes form weakly coupled plasmonic cavities. Group velocities around v_{g}=0.44c at the center of the coupled cavity band and almost a zero group velocity at the band edges are observed. A tight binding model is used to understand the coupling behavior. Furthermore, the sinusoidally modified amplitude about the node suppresses the radiation losses and reveals a relatively high quality factor (Q=103).

The temperature dependence (15±293 K) of the six Raman-active mode frequencies and linewitdhs in gallium sul®de has been measured in the frequency range from 15 to 380 cm 21. We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion and lattice anharmonicity. The pure-temperature contribution (phonon± phonon coupling) is due to three-and four-phonon processes. q