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The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the channeled implantation, deeper profiles were obtained with lower implantation energy and less damage compared to random implantation. P-type conduction of Mg channel implanted layer was confirmed electrically and optically when the ion dose and implantation energy are 1 × 1014 cm−2 and 20 keV, respectively. However, even with channeled implantation, several types of defects including point defects and oblong defects as seen in the random implantation were observed by TEM/STEM analysis. In addition, RBS analysis showed slightly worse crystal qualities in channeled implantation compared to non-implanted samples. Mg channeled implantation is useful to achieve deeper profiles (> 1 µm), but further condition tuning of process will be necessary for practical application.

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