Thick GaN layers were grown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour. In this experiment, the growth began as selective growth through openings formed in a SiO2 mask. Facets consisting of {1101} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO2 mask. As a result, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.

The structure of acetonitrile−water mixtures has been investigated by X-ray diffraction with an imaging plate detector and IR spectroscopy over a wide range of acetonitrile mole fractions (0.0 ≤ X AN ≤ 1.0). Reichardt E T N and Sone-Fukuda D II,I values were also measured for the mixtures. It has been found from the X-ray data that in pure acetonitrile an acetonitrile molecule interacts with two nearest neighbors by antiparallel dipole−dipole interaction together with a small shift of the two molecular centers and that two acetonitrile molecules in the second-neighbor shell interact with a central molecule through parallel dipole−dipole interaction. Thus, acetonitrile molecules are alternately aligned to form a zigzag cluster. On addition of water into pure acetonitrile, water molecules interact with acetonitrile molecules through a dipole−dipole interaction in an antiparallel orientation. The IR spectra of O−D and C⋮N stretching vibrations, observed for mixtures of acetonitrile AN and water containing 20% D2O, suggested that hydrogen bonds are also formed between acetonitrile and water molecules in the mixtures at X AN ≤ 0.8. The average numbers of the first- and second-neighbor acetonitrile molecules gradually increase with increasing water content with an almost constant first-neighbor distance and slightly decreased second-neighbor ones. Thus, acetonitrile molecules are assembled to form three-dimensionally expanded clusters; the acetonitrile clusters are surrounded by water molecules through both hydrogen bonding and dipole−dipole interaction. The X-ray radial distribution functions and IR spectra suggest that the hydrogen bond network of water is enhanced in the mixtures at X AN < 0.6. The concentration dependence of E T N and D II,I values determined reflects well the above-mentioned behavior of water molecules in the mixtures. These findings suggest that both water and acetonitrile clusters coexist in the mixtures in the range of 0.2 ≤ X AN < 0.6, i.e., “microheterogeneity” occurs in the acetonitrile−water mixtures.

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Completely vertical trench gate metal oxide semiconductor field-effect transistors (MOSFETs) have been produced using gallium nitride (GaN) for the first time. These MOSFETs exhibited enhancement-mode operation with a threshold voltage of 3.7 V and an on-resistance of 9.3 mΩ·cm2. The channel mobility was estimated to be 131 cm2/(V·s) when all the resistances except for that of the channel are considered. Such structures, which satisfy the key words “vertical”, “trench gate”, and “MOSFET”, will enable us to fabricate practical GaN-based power switching devices.

The crystal structure of ionic nanocrystals (NCs) is usually controlled through reaction temperature, according to their phase diagram. We show that when ionic NCs with different shapes, but identical crystal structures, were subjected to anion exchange reactions under ambient conditions, pseudomorphic products with different crystal systems were obtained. The shape-dependent anionic framework (surface anion sublattice and stacking pattern) of Cu2O NCs determined the crystal system of anion-exchanged products of CuxS nanocages. This method enabled us to convert a body-centered cubic lattice into either a face-centered cubic or a hexagonally close-packed lattice to form crystallographically unusual, multiply twinned structures. Subsequent cation exchange reactions produced CdS nanocages while preserving the multiply-twinned structures. A high-temperature stable phase such as wurtzite ZnS was also obtained with this method at ambient conditions.