CuO thin films on porous silicon (PSi) substrates were prepared via spray pyrolysis method. The structural, optical and electrical properties of the films and the heterojunctions were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer. XRD results show that the film is polycrystalline and have a monoclinic crystal structure. Optical measurement indicates that the films had a low transmittance at the visible range and an optical bandgap of 2.2[Formula: see text]eV. High rectification was achieved with a maximum photoresponsivity of about 0.59[Formula: see text]A/W at 400[Formula: see text]nm, so that the CuO/PSi heterojunction may act as a good candidate for the fabrication of an efficient photodiode.

The Cd[Formula: see text]Zn[Formula: see text]O thin films have been deposited on glass and Si substrates at room-temperature with different Cd contents (x = 0, 2%, 4% and 6 wt.%) by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analyses evidenced that the films possess polycrystalline and a hexagonal ZnO crystal structure for x = 0, 2% and 4% with a preferred orientation in the a-axis (101) direction, while films with a mixed hexagonal and cubic structure was revealed for x = 6 wt.%. Electrical measurement presented that the resistivity decreased with increased temperature and concentration of Cd. The deliberated activation energy was reduced was from 0.224 to 0.113 eV with increase doping concentration. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the fabricated Cd[Formula: see text]Zn[Formula: see text]O/p-Si heterojunction varied with the applied bias and the Cd concentration. The results of the values of built-in potential (V[Formula: see text]) and the ideality factor (n) increased with raising Cd concentration.

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Using a chemical spray technique, an n-type WO3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50-90mM. In the UV-Visible spectrum of the WO3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%-53%), (9.63%-5.02%), and (3.40eV-2.63 eV), respectively. The X-ray diffraction of the WO3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO3 film had the lowest resistivity value of 2.393 × 108 cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.

Monoclinic WO3 thin films have been effectively deposited by a simple spray pyrolysis technique at a molar concentration of 0.01 M on a glass substrate in the temperature range of 473 to 673 K. These WO3 films were used as an interlayer between the metal and the semiconductor, which formed the basic structure of the photodetector. Effect of substrate temperature on WO3 films during the process of the deposition was systematically interpreted with respect to the structural, morphological, optical and electrical properties of the WO3 films. The X-ray diffraction pattern revealed the polycrystalline nature of the prepared films with monoclinic phases. At the substrate temperature of 623 K, the nano-thin films were strongly bonded to each other as observed from the FE-SEM images. Visible and ultraviolet spectroscopies indicated the band gap (Eg) of the WO3 thin film is 3.30 eV. The dc electrical study recorded a sharp increase in the electrical conductivity of the prepared film at substrate temperature of 623 K for tungsten trioxide. It is worth noting that all diodes showed a positive photoresponse under illumination. In particular, the photodetector with the thickness of 300 nm showed higher responsivity 0.02 A/W and detection specificity 8.29 x 1010 Jones.