This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2Ω cm .

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

This paper investigate the dependence of substrate temperature onto characteristic of Gallium doped Zinc Oxide (Ga:ZnO). Ga:ZnO films were deposited on a glass substrate by RF Magnetron Sputtering using Ga:ZnO ceramic target with 99.99% purity. Sputtering power, argon flow and target distance were fixed in order to investigate the influence of substrate temperature to the growth characteristic, structural and optical properties of the films. Sputtering was performed with RF power of 100 Watt and the argon flow in was set at 10 sccm. The deposition times were fixed at 40 minute for all films. The result shows growth rate for Ga:ZnO growth at higher temperature are lower than at room temperature. Ga:ZnO thin films on different substrate temperature were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency over 80 percent were achieved.