Fast electron pattern generator (FEPG) is a variable shaped beam lithographic system specially designed for direct writing on wafers and for mask fabrication. Experimental results are given: gold gratings on silicon patterned with 10×0.3 μm spots, 1 μm gate field-effect transistor (FET), masks 1×. All these results performed with a 5 A/cm2 current density are consistent with a 1 μm technology. When the spot current exceeds 5 A/cm2, defects due to the space charge effect appear. Thermal effects on glass substrates are pointed out.