The group, restored with conventional amalgam, had the weakest resistance to fracture when compared with the bonded restorations. No statistically significant differences were found between the bonded amalgam and composite resin groups.

Photoresponse characteristics of InAs/GaAs self-assembled quantum-dot infrared photodetectors in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far infrared are shown. These behaviors can be qualitatively understood in view of the quantum-dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per dot on the spectra are investigated.

None of the systems were associated with void-free root fillings. The ActiV GP system had a significantly higher percentage volume of voids than the other systems.

No abstract

The variation of barrier height with the band gap in the metal/heterojunction systems is related to how the Fermi level position varies with respect to band edges. If the Fermi level is pinned by the interface states its movement will also correspond to the movement of the neutrality level at the interface. Metal/Si1−xGex/Si heterostructures (0⩽x⩽0.24) for both n- and p-type substrates were studied to understand the relation between Schottky barrier, Fermi level movement, and the band gap variations. It was shown that a correlation exists between Schottky barrier height variation and band-offset values ΔEc and ΔEv. For n-type substrate, measured barrier height differences are almost the same as the band offsets in the conduction band ΔEc. For p-type substrates they were found to be slightly smaller than ΔEv. This shows that Fermi level position relative to the conduction band edge does not change with band gap variation.