The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

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A 20 GHz bandwidth 1.3 μηι InGaAsP/InP StraightWall Mass-Transport Buried Heterostructure laser diode was developed to operate in a microwave fiber optic link. When used in a microwave link, the laser has a typical RF insertion loss of 37 dB, an equivalent input noise density less than -115dBm/Hz, a IdB compression dynamic range greater than 138 dB-Hz, and a spurious signal free dynamic range of 97 dB · Hz 2 ' 3 . The wide bandwidth, high dynamic range and low-noise of the laser module were obtained through the design of the package, the subcarrier and the laser chip. The noise and modulation properties of these lasers make them attractive sources for analog and microwave fiber optic applications.