The paper presents technology for a phased low-temperature diffusion doping of silicon with gadolinium that helps engineer clusters of impurity atoms distributed across the entire bulk material. The authors have shown that no surface erosion or formation of alloys and silicides on the surface are detected while applying low temperature diffusion technology which normally takes place during high-temperature diffusion doping. The authors revealed the increased thermal and radiation resistance of silicon samples containing clusters of impurity atoms of gadolinium.