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In Mexico City there are more than 22 millions of inhabitants (10 in the metropolitan area and 12 in the suburban zone) exposed to drinking water. The local epidemiological authorities recognised that exposure to radon contaminated drinking water is a potential health hazard, as has been considered worldwide. The United States Environmental Protection Agency has proposed a limit of 11.1 Bq l(-1) for the radon level in drinking water. In Mexico a maximum contamination level of radon in drinking water has not yet even considered. In this work, a (222)Rn study of drinking water in Mexico City has revealed a range of concentrations from background level to 3.8 Bq l(-1). (222)Rn was calculated using a portable degassing system (AquaKIT) associated with an AlphaGUARD measuring system. Samples from 70 wells of the water system of the south of the Valley Basin of Mexico City and from houses of some other political administrative divisions of Mexico City were taken.

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Cubic GaN (c-GaN) samples on GaAs (0 0 1) substrates were grown by RF-plasma-assisted molecular beam epitaxy, in which an As4 overpressure was employed for the nucleating layer. Photoreflectance spectra were obtained in the temperature range from 14 to 300 K. Two independent phenomena were noticed. The first one consisted in optical interference features below the c-GaN bandgap, whose origin is a thermo-optical effect: the ultraviolet perturbation beam changes the refractive index of the c-GaN. The second one represents electro-optical phenomena in which two classical band-to-band transitions occur: the first transition for c-GaN layer in which the temperature dependence reveals defects in the film attributed to a hexagonal fraction estimated previously between 3% and 10%, and a second transition for the GaAs substrate that shows Franz–Keldysh oscillations.

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