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A method for calculating the composition of cosputtered films from calculated deposition profiles and measured film thicknesses has been shown to be applicable to high concentrations of each of the components. Four new modifications are described for concentrations ranging down to 0.1% or less, which employ alternate ways of determining deposition rates. Several examples of cosputtered Cu–Ni alloys show that the rms accuracy of the methods is about 25% of the amount of the solute. Cosputtered films of Al–Si so analyzed have been used as standards for instrumental methods of analysis.

Thin films of crystalline titania with different grain sizes and porosities were prepared by dip-coating on Si (100) substrates starting from a sol-gel process. Three synthesis procedures were developed and compared, using acetylacetone (acac, with HCI) and acetic acid (HOAc) as modifying agents or directly using hydrochloric acid as catalyst. The structural evolution of the films was characterized by Glazing Angle X-ray Diffraction (XRD), Spectroscopic Ellipsometry and Atomic Force Microscopy (AFM). Anatase phase was observed on all of the films calcined at 440° C. The grain sizes and crystallinity generally increased with calcination temperature. Thin films obtained from acac- and HOAc-modified titanium sols had fine grains (50–80 nm) and less porosity (<10%) after calcination at 1000° C. Thin films derived from the sol catalyzed directly with acid had the largest grains (90–130 nm), higher crystallinity and greater porosity (17%).

Optical spectroscopy for glow discharge sputtering diagnostics and process control